BU800

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5.0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU800 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Base Cutoff Current hFE -1 DC Current Gain IC= 5.0A; IB= 1.0A VCB=750V; IE= 0 VCB=1500V; IE= 0 IC= 0.1A; VCE= 5V hFE -2 DC Current Gain IC= 5A; VCE= 5V VECF C-E Diode Forward Voltage IF= 5A BU800 MIN TYP. MAX UNIT 5 V 5.0 V 1.5 V 50 uA 1 mA 6 30 2.25 2.5 V Switching Times tstg Storage Time tf Fall Time IC = 5A,IB1...