BU806FI

isc Silicon NPN Darlington Power Transistor BU806FI DESCRIPTION ·High voltage ·High switching speed ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This Darlington transistor is a high voltage ,high speed device for use in horizontal deflection circuits in TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 400 V VCEV Collector- Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 A 30 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.16 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)* Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(sat)* Base-Emitter Saturation Voltage IC= 5A; IB= 50mA ICES Collector Cutoff Current VCE= Rated VCBO;VBE= 0 ICEv Collector Cutoff Current VCE= Rated VCEV;VBE(off)= 6V IEBO Emitter Cutoff Current VEB= 6V; IC=0 VECF* C-E Diode Forward Voltage IF= 4...