BU931P

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·DARLINGTON ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 15 A ICM Collector Current-peak 30 A IB Base Current 1 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 135 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.1 ℃/W BU931P isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU931P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.6 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 8 A; IB= 100mA 1.8 V V CE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 250mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 7A; IB= 70mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA 2.4 V V BE(sat)-3 Base-Emitter Saturation Voltage I...