BU2527DX

isc Silicon NPN Power Transistor INCHANGE Semiconductor BU2527DX DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 30 A IB Base Current-Continuous 8 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 45 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.8 K/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BU2527DX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 8A; IB= 1.6A VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ VEB= 6V; IC= 0 hFE-1 DC Current Ga...