BU2727A

isc Silicon NPN Power Transistor BU2727A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous 825 V 8 V 12 A ICM Collector Current-Peak IB Base Current- Continuous IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 12 A 25 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU2727A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0; 825 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.91A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.91A 0.95 V hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 12 35 hFE-2 DC Current Gain ICES Collector Cutoff Current IEBO ...