isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-247 packaging ·Large collector current ·Low collector saturation ...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-247 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
14
A
ICM
Peak Collector Current
30
A
IC
Base Current
8
A
PC
Collector Power Dissipation@TC=75℃
125
W
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.0 ℃/W
BU4525DW
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 2.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 9A; IB= 2.25A
ICEO
Collector Cutoff Current
VCE= 800V; IB=0
ICBO
Collector Cutoff Current
VCB= 1500V; IE=0
hFE
DC Current Gain
IC=...
