BUF405AFP

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high reliability industrial and professional power driving applications such as motor drivers and off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage VBE= -1.5V 1000 VCEO Collector-Emitter Voltage 450 UNIT V V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7.5 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4.5 A 39 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.2 ℃/W BUF405AFP isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUF405AFP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 0.5 V VBE(sat)...