isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V(Min.) ·High Speed...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits in televisions
and monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Base Voltage VBE= 0
1500
V
VCEO Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Peak
22
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
9
A
200
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W
BUH1215
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 12A; IB= 2.4A
VCE= 1500V VCE= 1500V;TC=125℃
VEB= 5V; IC= 0
hFE
DC Current Gain
Switching Times
ts
Storage Time
tf
Fall Time
IC= 12A; VCE= 5V IC= 1...