BUL56B

isc Silicon NPN Power Transistor BUL56B DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 18 A ICM Collector Current-peak 25 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 5 A 85 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUL56B MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A 1.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 7A; IB= 0.7A 1.2 V VBE(sat)-2 ...