isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ·Low Collec...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in lighting applications and low cost
switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
800
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak tp<5ms
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak tp<5ms
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
4
A
70
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150 ℃ MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.78 ℃/W
Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W
BUL382D
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BUL382D
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VCE...