BUL416T

isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL416T DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 6 A ICM Collector Current-peak tp<5ms 9 A IB Base Current-Continuous 5 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 8 A 110 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.14 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL416T ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; Ib=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturat...