isc Silicon NPN Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE>20@IC= 20A ·Low Collector-Emitter Saturation ...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE>20@IC= 20A ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Ideally suited for Motor Control, Switching and Linear
Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
70
A
ICM
Peak collector current
90
A
PC
Collector Power Dissipation@TC=25℃
300
W
TJ
Junction Temperature
-55~200 ℃
Tstg
Storage Temperature Range
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 0.58
UNIT ℃/W
BUP52
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isc Silicon
NPN Power
Transistor
BUP52
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(BR)
Collector-Emitter Voltage
Breakdown IC=10mA; IB=0
IC=20A; IB=2A
MIN TYP MAX UNIT
200
V
0.5
VCE(sat) Collector-Emitter Saturation Voltage IC=40A; IB=4A
0.6
V
IC=70A; IB=14A
0.9
IC=20A; IB=2A
1.1
VBE(sat) Base-Emitter Saturation Voltage
IC=40A; IB=5A
1.2
V
IC=70A; IB=15A
1.5
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff current
VCE=300V; VEB=1.5V
VCE=300V; VEB=1.5V;TC=150℃
VEB=4V; IC=0
0.1 mA
5
1.0 mA
IC=20A ; VCE=4V
20
hFE
DC Current Gain
IC=40A ; VCE=4...
