BUR22

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 20A ·High Switching Speed ·High DC Current Gain- : hFE= 10(Min.) @IC= 20A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 350 V 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 50 A 8 A 250 W 200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W BUR22 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUR22 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 250 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB=2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 40A ;IB= 10A VBE(sat) Base-Emitter Saturation Voltage IC= 20A; IB=2A ICEO Collector Cutoff Current VCE= 250V; IB= 0 ICBO Collector Cutoff Current VCB= 350V; IC=0 IEBO Emitter Cutoff Current VEB=...