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BUV12

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications. ABSOLUTE MAXIM...

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