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BUV47B Dataheets PDF



Part Number BUV47B
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BUV47B DatasheetBUV47B Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 220V switch mode power supply, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-.

  BUV47B   BUV47B


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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V(Max.)@IC= 6A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 220V switch mode power supply, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 9 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.38 ℃/W BUV47B isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUV47B ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= mA; IC= 0 MIN TYP. MAX UNIT 400 V 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 9A; IB= 3A 3.0 V VBE(sat) Base-Emitter Saturation Voltage ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current Switching Times, Resistive Load ton Turn-on Time ts Storage Time tf Fall Time IC= 6A; IB= 1.2A VCE= 400V; IB= 0 VCB= 850V; IE=0 VEB= 5V; IC= 0 IC= 6A; IB1=-IB2= 1.2A; VCC= 150V 1.6 V 1.0 mA 0.15 mA 1.0 mA 1.0 μs 3.0 μs 0.8 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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