BUW133

isc Silicon NPN Power Transistor BUW133 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCES Collector- Emitter Voltage (VBE= 0) 850 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current 10 IBM Base Current-Peak 15 PC Collector Power Dissipation @TC=25℃ 135 Tj Junction Temperature 150 UNIT V V V A A A A W ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.93 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW133 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.7A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.3A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector-Base Cutoff Current IEBO Emitter Cutoff Current IC= 10A; IB= 1.3A VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TJ=100℃ VEB= 6V; IC= 0 hFE DC Current Gain COB Output Capacitance Switching...