isc Silicon NPN Power Transistor
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Mini...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high frequency and efficiency
converters,switching
regulators and motor control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
PC
Collector Power Dissipation@TC=25℃
70
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0
℃/W
BUX61
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 0.8A
ICEO
Collector Cutoff Current
VCE= 200V; IB=0
ICBO
Collector Cutoff Current
VCB= 250V, IE=0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC=0.5A;VCE=10V
BUX61
MIN MAX UNIT
200
V
1.5
V
2.0
V
2
mA
1.0
mA
0.5
mA
20
60
8
MHz
NOTICE: ISC reserves the ri...