BUX90

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Reliability ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 650 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 5 IC Collector Current 12 ICM Collector Current-peak 20 IB Base Current 1 IBM Base Current-peak 5 PC Collector Power Dissipation @TC=25℃ 125 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUX90 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BUX90 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 100mA 1.6 V VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 10A; IB= 250mA 1.8 V V BE(sat) -1 Base-Emitter Saturation Voltage IC= 8A; IB= 100mA 2.2 V V BE(sat) -2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector ...