BUY23

isc Silicon NPN Power Transistor BUY23 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 250V(Min.) ·Excellent Safe Operating Area ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 2 A 100 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUY23 MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 250 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICBO Collector Cutoff...