C0718

isc Silicon NPN Power Transistor INCHANGE Semiconductor C0718 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor C0718 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 250V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 10 μA hFE DC Current Gain IC= 3.2A ; VCE= 5V 100 200 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1.0MHz 350 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V;ftest= 1.0MHz 20 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification...