isc Silicon NPN Darlington Power Transistor
D40C7
DESCRIPTION ·High DC Current Gain-
: hFE = 10K-70K ·Collector-Emitte...
isc Silicon
NPN Darlington Power
Transistor
D40C7
DESCRIPTION ·High DC Current Gain-
: hFE = 10K-70K ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 50V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
13
V
IC
Collector Current-Continuous
0.5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
1
A
6.25
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-55~150 ℃ MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
20 ℃/W
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isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA, IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA ,IB= 0.5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA ,IB= 0.5mA
ICBO
Collector Cutoff Current
VCB=50V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 13V; IC= 0
hFE
DC Current Gain
IC= 200mA ; VCE= 5V
D40C7
MIN
MAX UNIT
50
V
1.5
V
2
V
20
µA
100
nA
10K
70K
NOTICE: ISC reserves the rights to make changes of the co...