D44Q1

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min)- D44Q1 = 175V(Min)- D44Q3 = 225V(Min)- D44Q5 ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT D44Q1 200 VCBO Collector-Base Voltage D44Q3 250 V D44Q5 300 D44Q1 125 VCEO Collector-Emitter Voltage D44Q3 175 V D44Q5 225 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 31.25 W 1.67 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 4 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 75 ℃/W D44Q1/3/5 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage D44Q1 D44Q3 D44Q5 IC= 10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current D44Q1 D44Q3 D44Q5 VCB= 200V;IE= 0 VCB= 250V;IE= 0 VCB= 300V;IE= 0 hFE-1 DC Curre...