isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V (Min) ·High Swit...
isc Silicon
NPN Power
Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCES
Collector-Emitter Voltage VBE=0
400
VCEO
Collector-Emitter Voltage
300
UNIT V V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
31.2
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 4 ℃/W
D44T3/4
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isc Silicon
NPN Power
Transistors
D44T3/4
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
ICES
Collector Cutoff Current
VCE= 400V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
D44T3 D44T4
IC= 0.5A ; VCE= 10V
hFE-2
DC Current Gain
D44T3 D44T4
IC= 50mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V; ftest= 1MHz
MIN TYP. MAX UNIT
1...