D44TD3

isc Silicon NPN Power Transistors D44TD3/4/5 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- D44TD3 = 350V(Min)- D44TD4 = 400V(Min)- D44TD5 ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, high resolution deflection circuits, inverters and motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage D44TD3 400 D44TD4 500 V D44TD5 600 VCEO Collector-Emitter Voltage D44TD3 300 D44TD4 350 V D44TD5 400 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage D44TD3 D44TD4 IC= 0.1A ;IB= 0 D44TD5 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICEV Collector Cutoff Current D44TD3 VCE= 400V;VBE(off)= 1.5V D44TD4 VCE= 500V;VBE(off)= 1.5V D44TD5 VCE= 600V;V...