D44VH1

isc Silicon NPN Power Transistors D44VH Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D45VH Series ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT D44VH 1 50 VCEV Collector-Emitter Voltage D44VH 4 70 V D44VH 7 80 D44VH 10 100 D44VH 1 30 VCEO Collector-Emitter Voltage D44VH 4 45 V D44VH 7 60 D44VH 10 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 20 A 83 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case 1.5 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered tradema isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS D44VH Series MIN TYP. MAX UNIT D44VH 1 30 VCEO(SUS) Collector-Emitter Sustaining Voltage D44VH 4 D44VH 7 IC= 25mA ;IB= 0 VCE(sat)-1 D44VH 10 Collector-Emitter Saturation Voltage IC= 8A ;IB= 0.4A VCE(sat)-2 VBE(sat) ICEV IEBO Col...