isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·This device is designed for power amplifier,regulator and
Switching circuits where speed is important
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector.