D45H8

isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -20 A 70 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.8 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W D45H8 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-EmitterSaturation Voltage IC= -8A ;IB= -0.4 A VBE(sat) Base-Emitter Saturation Voltage IC= -8A ;IB= -0.8 A ICES Collector Cutoff Current VCE=Rated VCEO; VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A ; VCE= -1V hFE-2 DC Current Gain IC= -4A ; VCE= -1V fT Current-Gain—Bandwidth Product IC=-0.5A;VCE=-10V; D45H8 MIN TYP MAX...