isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation vo...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
5
A
ICM
Peak Collector Current
15
A
PC
Collector Power Dissipation
50
W
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.5 ℃/W
DD502B
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO
Collector Cutoff Current
VCE= 80V; IB=0
ICBO
Collector Cutoff Current
VCB= 150V; IE=0
hFE
DC Current Gain
IC= 0.5A; VCE= 10V
hFE:
O
P
Q
30~50
50~80
>80
DD502B
MIN MAX UNIT
80
V
150
V
4
V
1.5
V
...
