isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Min) @IC= 8A ·High rel...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Min) @IC= 8A ·High reliability ·High D.C current gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
80
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
ET190
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
V(BR)CBO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
VCBO (SUS) Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0
VEBO
Emitter-Base Breakdown Voltage
IEBO=200mA
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.1A
VBE(on)
Base-Emitter On Voltage
IC= 5A ; IB= 0.1A
ICBO
Collector Cutoff Current
VCB= 600V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE-1
DC Current Gain
IC= 5A ; VCE= 5V
ET190
MIN TYP. MAX UNIT
600
V
600
V
450
V
6
V
1.2
V
1.8
V
1
mA
200 mA
200
NOTICE： ISC reserves the rights to make changes of the con...
