ET375

Silicon NPN Darlington Power Transistor INCHANGE Semiconductor ET375 DESCRIPTION ·High Reliability ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 650 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Silicon NPN Darlington Power Transistor INCHANGE Semiconductor ET375 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A, IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 15A ,IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 15A ,IB= 0.5A ICBO Collector Cutoff current VCB= 600V, IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 15A ; VCE= 5V Switching Times ton Turn-On ...