FJA4213

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Breakdown Voltage- : V(BR)CEO= -230V(Min.) ·Good Linearity of hFE ·Complement to Type FJA4313 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ FJA4213 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor FJA4213 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞ -230 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -230 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -230V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 160 ...