2SA1962/FJA4213 PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose P...
2SA1962/FJA4213
PNP Epitaxial Silicon
Transistor
Applications
High-Fidelity Audio Output Amplifier General Purpose Power Amplifier
Features
High Current Capability: IC = -17A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SC5242/FJA4313. Thermal and electrical Spice models are available. Same
transistor is also available in:
-- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO220 package, FJP1943 : 80 watts -- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO BVCEO BVEBO IC IB PD
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation(TC=25°C) Derate above 25°C
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
hFE Classification
Classification
hFE1
R
55 ~ 110
© 2009 Fairchild Semiconductor Corporation
2SA1962/FJA4213 Rev. C
1
January 2009
1
TO-3P
1.Base 2.Collector 3.Emitter
Ratings
-250 -250
-5 -17 -1.5 130 1.04 - 50 ~ +150
Units
V V V A A W W/°C °C
Max.
0.96
Units
°C/W
O
80 ~ 160
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