FJD3076

isc Silicon NPN Power Transistor INCHANGE Semiconductor FJD3076 DESCRIPTION ·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A PC Collector Power Dissipation (Ta=25℃) 1 W PC Collector Power Dissipation (Tc=25℃) 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor FJD3076 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA; IC= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 ICBO Collector Cutoff Current VCB= 20V; IE= 0 hFE DC Current Gain IC= 0.5A; VCE= 3V fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz MIN TYP. MAX UNIT 0.8 V 40 V 32 V 5 V 1 uA 1 uA 130 390 100 MH...