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FJD5555

NPN Transistor

Description

isc Silicon NPN Power Transistor FJD5555 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Fast Speed Switching ·Wide safe operating Area ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Designed for electronic ballast application ABSOLUTE MAXIMUM RATINGS (T...

INCHANGE

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