FJPF5021

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ FJPF5021 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVEBO Emitter -Base Breakdown Voltage IE= 1mA; IC= 0 BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0 BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.6A; VCE= 5V hFE DC Current Gain  hFE-1 Classifications R O Y 15-30 20-40 30-50 IC= 3A; VCE= 5V FJPF5021 MIN TYP. MAX UNIT 7 V 500 V 800 V 1.0 V 1.5 V 10 μA 10 μA 15 50 8 NOTICE： ISC reserves the rights to make changes of the c...