FJPF5027

isc Silicon NPN Power Transistor FJPF5027 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide SOA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor FJPF5027 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVEBO Emitter -Base Breakdown Voltage IE= 1mA; IC= 0 BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0 BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.2A; VCE= 5V hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IE= 0.2A; VCE= 10V MIN TYP. MAX UNIT 7 V 800 V 1100 V 2.0 V 1.5 V 10 μA 10 μA 10 40 8 15 MHz  hFE-1 Classifications N...