HLB123D

isc Silicon NPN Power Transistor DESCRIPTION ·High voltage ·High speed switching ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The HLB123D is designed for high voltage,high speed switching inductive circuits and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCER Collector-Emitter Voltage RBE=150Ω 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 1 A 30 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ HLB123D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC=100mA; IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=300mA; IB= 30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC=100mA; IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC=300mA; IB= 30mA ICBO Collector Cutoff Current VCB= 600V ; IE= 0 IEBO Emitter Cutoff Current VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 300mA ; VCE= 5V hFE-2 DC Current Gain IC= 500mA ; VCE= 5V hFE-3 DC Current Gain IC= 1A ; VCE= 5V HLB123D MIN TYP. MAX UNIT 0.8 V 0.9 V 1.2 V 1.8 V 10 μA 1...