KSA1381

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High voltage ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·CRT display,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 1.2 w 7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSA1381 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA VBE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -10mA ; VCE= -10V  hFE Classifications C D E F 40-80 60-120 100-200 160-320 KSA1381 MIN TYP. MAX UNIT -0.6 V -1.0 V -0.1 μA -0.1 μA 40 320 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage...