PNP Transistor. KSB601 Datasheet

KSB601 Transistor. Datasheet pdf. Equivalent

Part KSB601
Description PNP Transistor
Feature isc Silicon PNP Darlington Power Transistor KSB601 DESCRIPTION ·High DC Current Gain- : hFE = 2000.
Manufacture INCHANGE
Datasheet
Download KSB601 Datasheet

KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed KSB601 Datasheet
isc Silicon PNP Darlington Power Transistor KSB601 DESCRIP KSB601 Datasheet
Recommendation Recommendation Datasheet KSB601 Datasheet





KSB601
isc Silicon PNP Darlington Power Transistor
KSB601
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low-frequency power amplifiers and low-
speed switching applications.
·Ideal for use in direct drive from IC output for magnet drivers
such as terminal equipment or cash registers.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-8
A
IB
Base Current-DC
Collector Power Dissipation
TC=25
PC
Collector Power Dissipation
Ta=25
Tj
Junction Temperature
-0.5
A
30
W
1.5
150
Tstg
Storage Temperature Range
-55~150
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KSB601
isc Silicon PNP Darlington Power Transistor
KSB601
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A ,IB= -3mA
ICBO
Collector Cutoff Current
VCB= -100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A ; VCE= -2V
hFE-2
DC Current Gain
IC= -5A ; VCE= -2V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
RL= 17Ω, VCC-50V
IC= -3A; IB1= -IB2= -3mA
MIN TYP. MAX UNIT
-1.5
V
-2.0
V
-10
μA
-3
mA
2000
15000
500
0.5
μs
1.0
μs
1.0
μs
hFE-1 Classifications
R
O
Y
2000-5000 3000-7000 5000-15000
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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