KSB1097

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @ Ta=25℃ Total Power Dissipation @ TC=25℃ Junction Temperature -80 V -60 V -7 V -7 A -15 A -3.5 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KSB1097 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -3A; VCE= -1V hFE-2 DC Current Gain IC= -5A; VCE= -1V  hFE-1 Classifications R O Y 40-80 60-120 100-200 KSB1097 MIN TYP. MAX UNIT -0.5 V -1.5 V -10 μA -10 μA 40 200 20 Notice： ISC reserves the rights to make changes of the content herein the datasheet at ...