isc Silicon NPN Power Transistor
DESCRIPTION ·High voltage and high fT ·Complementary to kSA1220 PNP transistor ·100% a...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High voltage and high fT ·Complementary to kSA1220
PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The 2SC2690 is general purpose
transistors designed
For use in audio and radio frequency power amplifiers. ·Suitable for use in driver stage of 50 to 100W audio
Amplifiers and output stage of TV vertical deflection circuit
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCER
Collector-Emitter Voltage RBE=150Ω
120
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ Tc=25℃
TJ
Junction Temperature
1.2
A
20
W
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
KSC2690
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 200mA
VBE(sat) Base-Emitter Saturation Voltage
IC=1A; IB= 200mA
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.3A ; VCE= 5V
hFE-2 Classifications
R
O
Y
60-120 100-200 160-320
KSC2690
MIN TYP. MAX UNIT
0.7
V
1.3
V
1
μA
1
μA
35
60
320
...
