isc Silicon NPN Power Transistor
DESCRIPTION ·High breakdown voltage ·Complementary to KSA1156 PNP transistor ·100% ava...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High breakdown voltage ·Complementary to KSA1156
PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The KSC2752 is suitable for low power switching
regulator, DC-DC converter and high voltage switch.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCER
Collector-Emitter Voltage RBE=150Ω
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ Tc=25℃
TJ
Junction Temperature
0.5
A
10
W
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
KSC2752
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC=0.3A; IB= 60mA
VBE(sat) Base-Emitter Saturation Voltage
IC=0.3A; IB= 60mA
ICBO
Collector Cutoff Current
VCB= 500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 50mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.3A ; VCE= 5V
hFE-1 Classifications
R
O
Y
20-40 30-60 40-80
KSC2752
MIN TYP. MAX UNIT
1.0
V
1.2
V
10 μA
10 μA
20
80
10
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor...
