KSB1151

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSB1151 TRANSISTOR (PNP) FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Current z High Power Dissipation z Complement to KSD1691 TO – 126 1. EMITTER 2. COLLECTOR 3. BASE 0$5.,1* B1151 zXXX B1151 'HYLFH FoGH Solid dot = Green molding compound device, if none, the normal device ;;; &ode Equivalent Circuit ORDERING INFORMATION Part Number KSB1151 KSB1151-TU Package TO-126 TO-126 Packing Method Bulk Tube Pack Quantity 200pcs/Bag 60pcs/Tube MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -60 -7 -5 1.25 100 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ www.cj-elec.com 1 D,Aug,2017 (/(&75,&$/ &+$5$&7(5,67,&6 Ta=25 Я unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) Test conditions IC=-100µA,IE=0 IC=-1mA,IB=0 IE=-100µA,IC=0 VCB=-50V,IE=0 VEB=-7V,IC=0 VCE=-1V, IC=-2A VCE=-1V, IC=-0.1A VCE=-2V, IC=-5A IC=-...