PNP Transistor. KSB1151 Datasheet

KSB1151 Transistor. Datasheet pdf. Equivalent

Part KSB1151
Description PNP Transistor
Feature JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSB1151 T.
Manufacture JCET
Datasheet
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KSB1151
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
KSB1151 TRANSISTOR (PNP)
FEATURES
z Low Collector-Emitter Saturation Voltage
z Large Collector Current
z High Power Dissipation
z Complement to KSD1691
TO – 126
1. EMITTER
2. COLLECTOR
3. BASE
0$5.,1*
B1151
zXXX
B1151 'HYLFH FoGH
Solid dot = Green molding compound
device, if none, the normal device
;;; &ode
Equivalent Circuit
ORDERING INFORMATION
Part Number
KSB1151
KSB1151-TU
Package
TO-126
TO-126
Packing Method
Bulk
Tube
Pack Quantity
200pcs/Bag
60pcs/Tube
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-60
-7
-5
1.25
100
150
-55~+150
Unit
V
V
V
A
W
/W
www.cj-elec.com
1
D,Aug,2017



KSB1151
(/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
Test conditions
IC=-100µA,IE=0
IC=-1mA,IB=0
IE=-100µA,IC=0
VCB=-50V,IE=0
VEB=-7V,IC=0
VCE=-1V, IC=-2A
VCE=-1V, IC=-0.1A
VCE=-2V, IC=-5A
IC=-2A,IB=-0.2A
IC=-2A,IB=-0.2A
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
100-200
Y
160-320
Min Typ Max Unit
-60
V
-60
V
-7
V
-10 μA
-10 μA
100
400
60
50
-0.3 V
-1.2 V
G
200-400
www.cj-elec.com
2
D,Aug,2017





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