KSC3503

isc Silicon NPN Power Transistor KSC3503 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Silicon NPN epitaxial planar transistor ·Small reverse transfer capacitance and excellent high frequency characteristic ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high definition CRT display ,video output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.1 A 7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base breakdown voltage IC=1mA ; IB=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=20mA; IB= 2mA VBE(sat) Base-Emitter Saturation Voltage IC=20mA; IB= 2mA ICBO Collector Cutoff Current VCB= 300V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 10mA ; VCE= 10V fT Current-Gain—Bandwidth Product IE= -10mA; VCE= 30V KSC3503 MIN TYP. MAX UNIT 300 V 300 V 5 V 0.6 V 1....