KSC5021F

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors KSC5021F TRANSISTOR (NPN) FEATURES z High Speed Switching z High Voltage and High Reliability z Wide ASO TO – 220F 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 800 480 7 4 2 62.5 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE (sat) Cob fT Test conditions IC=1mA,IE=0 IC=5mA,IB=0 IE=1mA,IC=0 VCB=500V,IE=0 VEB=5V,IC=0 VCE=5V, IC=0.6A VCE=5V, IC=3A IC=3A,IB=0.6A IC=3A,IB=0.6A VCB=10V,IE=0, f=1MHz VCE=10V,IC=0.6A Min Typ Max Unit 800 V 480 V 7 V 10 μA 10 μA 15 50 8 1 V 1.5 V 80 pF 15 MHz CLASSIFICATION OF hFE (1) RANK R RANGE 15-30 O 20-40 Y 30-50 www.cj-elec.com 1 D,Nov,2018 TO-220F Package Outline Dimensions Symbol A A1 A2 A3 b b1 b2 c D E ...