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KSD363

NPN Transistor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor KSD363 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications. ABSOLU...

INCHANGE

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