KSD1692

isc Silicon NPN Darlington Power Transistor KSD1692 DESCRIPTION ·Low Collector–Emitter Sustaining Voltage ·High DC Current Gain ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 5 A 1.3 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor KSD1692 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 3mA, L= 1.0mH MIN TY P. MAX UNIT 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA 2.0 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μA ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ 1.0 mA hFE-1 DC Current Gain IC= 1.5 A; VCE= 2V 2000 20000 hFE-2 DC Current Gain IC= 3 A; VCE= 2V 1000 Switching Times ton Turn-on Time tstg Storage Ti...