isc Silicon NPN Darlington Power Transistor
KSD1692
DESCRIPTION ·Low Collector–Emitter Sustaining Voltage ·High DC Cur...
isc Silicon
NPN Darlington Power
Transistor
KSD1692
DESCRIPTION ·Low Collector–Emitter Sustaining Voltage ·High DC Current Gain ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
Ta=25℃ PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
5
A
1.3 W
15
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Darlington Power
Transistor
KSD1692
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 3mA, L= 1.0mH
MIN
TY P.
MAX
UNIT
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA
1.2
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 1.5mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10
μA
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
1.0
mA
hFE-1
DC Current Gain
IC= 1.5 A; VCE= 2V
2000
20000
hFE-2
DC Current Gain
IC= 3 A; VCE= 2V
1000
Switching Times
ton
Turn-on Time
tstg
Storage Ti...