KSE44H4

isc Silicon NPN Power Transistors INCHANGE Semiconductor KSE44H Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type KSE45H Series ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT KSE44H 1,2 30 VCEO Collector-Emitter Voltage KSE44H 4,5 KSE44H 7,8 45 60 V KSE44H 10,11 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Pa Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 20 A 50 W 1.67 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor KSE44H Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KSE44H2,5,8,11 COB Output Capacitance fT Current-Gain—Bandwidth Product CONDITIONS MIN TYP MAX UNIT IC= 8A ;IB= 0.8 A IC= 8A ;IB= 0.4 A 1 V IC= 8A ;IB= 0.8 A 1.5 V VCE=Rated VCEO; 10 μA VEB= 5V; IC= 0 100 μA 35 IC= 2A ; VCE= 1V 60 VC...