isc Silicon NPN Power Transistors
INCHANGE Semiconductor
KSE44H Series
DESCRIPTION ·Low Saturation Voltage ·Fast Switc...
isc Silicon
NPN Power
Transistors
INCHANGE Semiconductor
KSE44H Series
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type KSE45H Series ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
KSE44H 1,2
30
VCEO
Collector-Emitter Voltage
KSE44H 4,5 KSE44H 7,8
45 60
V
KSE44H 10,11
80
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Pa
Collector Power Dissipation @Ta=25℃
Tj
Junction Temperature
20
A
50
W
1.67
W
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon
NPN Power
Transistors
INCHANGE Semiconductor
KSE44H Series
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCE(sat)
Collector-Emitter Saturation Voltage
KSE44H1,4,7,10 KSE44H2,5,8,11
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
KSE44H1,4,7,10
hFE
DC Current Gain
KSE44H2,5,8,11
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
CONDITIONS
MIN TYP MAX UNIT
IC= 8A ;IB= 0.8 A IC= 8A ;IB= 0.4 A
1
V
IC= 8A ;IB= 0.8 A
1.5
V
VCE=Rated VCEO;
10
μA
VEB= 5V; IC= 0
100 μA
35 IC= 2A ; VCE= 1V
60
VC...