KSH122I

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSH122I DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Electrically similar to popular TIP122 ·DPAK for surface mount applications ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature 100 V 100 V 5 V 8 A 16 A 120 mA 1.75 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSH122I ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(sat)* Base-Emitter Saturation Voltage IC=8A; IB= 80mA VBE(on)* Base-Emitter On Voltage IC= 4A; VCE= 4V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 ICBO Colle...