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KSH122

ON Semiconductor

NPN Transistor

KSH122 / KSH122I — NPN Silicon Darlington Transistor KSH122 / KSH122I NPN Silicon Darlington Transistor Features Desc...


ON Semiconductor

KSH122

File Download Download KSH122 Datasheet


Description
KSH122 / KSH122I — NPN Silicon Darlington Transistor KSH122 / KSH122I NPN Silicon Darlington Transistor Features Description D-PAK for Surface Mount Applications High DC Current Gain Designed for general-purpose power and switching, such as output or driver stages in applications. Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I ” Suffix) Electrically Similar to Popular TIP122 Complement to KSH127 Applications Switching Regulators Converters Power Amplifiers Equivalent Circuit C 1 D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter B R1 R1  8k R2  0.12k R2 E Ordering Information Part Number KSH122TF KSH122TM KSH122ITU Top Mark KSH122 KSH122 KSH122-I Package TO-252 3L (DPAK) TO-252 3L (DPAK) TO-251 3L (IPAK) Packing Method Tape and Reel Tape and Reel Rail © 1999 Semiconductor Components Industries, LLC. October-2017,Rev. 3 Publication Order Number: KSH122/D KSH122 / KSH122I — NPN Silicon Darlington Transistor Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol VCB...




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